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Information × Registration Number 0211U009008, 0110U004939 , R & D reports Title Properties of Hg1-xCdxTe hetero and nanostructures and their modification under ion milling. popup.stage_title Head Izhnin Ihor Ivanovych, Registration Date 13-05-2011 Organization Scientific Research Company "Carat" popup.description2 Report: 243 p., 117 fig., 16 tabl., 1 addition, 202 references. The object of researches is electrophysical and optical properties of CdxHg1 xTe heterostructures. The subject of researches is modification of properties of CdxHg1 xTe heterostructures by ion milling. The purpose of work is research of intrinsic and dopant defects in the vacancy-doped and doped with In (As) CdxHg1-xTe heterostructures, grown by molecular-beam epitaxy, that is revealed by method of ion milling. Complex researches of defect-dopant structure of CdxHg1 xTe heterostructures grown by molecular-beam epitaxy of different technological origin are conducted with the use of the authors proposed method - ion milling. It is well-proven from researches of post-grown undoped and doped with In heterostructures of n-type conductivity, that concentration of electrons after relaxation of electrical properties after ion milling determined by residual donor centers, and thus determines a donor-type background in samples. It was revealed in heterostructures grown by this technology the existence of neutral defect with a concentration ~ 1017cm-3, which is formed on the stage of growth, and the concentration of which does not depend on subsequent thermal annealing. It is assumed that such defect can be Te nano-complex. The existence of non-exponential relaxation of electron concentration in damage n+-layer after ion milling is experimentally well-proven, that related to disintegration of donor-type centers formed at ion milling by interstitial mercury with dislocation loops. It is proven that an interstitial mercury in the process of ion milling is sensitive to the structure of dopant complex As (dimer of As2 or tetramer of As4) for the different charts of doping at growing of CdxHg1-xTe heterostructures by molecular-beam epitaxy. It is revealed that a dimer complex As2 at growth partly blocks a specific neutral defect. Thermal activation of As in the process of the thermal annealing to obtaining of р-type conductivity samples, when As is transferred from metallic sub-lattice to anionic sub-lattice, takes off blocking of neutral defect. The photoluminescence of single potential and quantum wells in CdxHg1-xTe heterostructures is investigated. Product Description popup.authors Іжнін Ігор Іванович Іжнін Олександр Іванович Генега Наталія Ярославівна Поцяск Малгожата Фіцич Олена Іванівна popup.nrat_date 2020-04-02 Close