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Information × Registration Number 0212U005717, 0112U002842 , R & D reports Title Development of the technology for deposition of nanocrystalline silicon carbide films for the production of high- stability temperature sensors on their base popup.stage_title Head Lopin Aleksandr Vladimirovich, Registration Date 26-12-2012 Organization Institute for Single Crystals National Academy of Sciences of Ukraine popup.description2 Developed is the method for modification of the optical properties of SiC films by annealing in vacuum. After annealing of consolidated nc-SiC films in oxygen, there are formed contrasting interface boundaries and oxidated boundary regions. For studying the electrophysical properties of the films, a contact system for high-resistance nc-SiC film layers of Ni-TiB2-Au type, as well as technological schemes for the making of fgast-response temperature sensors, are developed and tested. Product Description popup.authors Козловський Анатолій Анатолійович Семенов Олександр Володимирович popup.nrat_date 2020-04-02 Close
R & D report
Development of the technology for deposition of nanocrystalline silicon carbide films for the production of high- stability temperature sensors on their base
Head: Lopin Aleksandr Vladimirovich. Development of the technology for deposition of nanocrystalline silicon carbide films for the production of high- stability temperature sensors on their base. (popup.stage: ). Institute for Single Crystals National Academy of Sciences of Ukraine. № 0212U005717
1 documents found

Updated: 2026-03-20


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