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0212U007764,
0112U008079
,
The development of highly efficient infrared heaters general technical purposes with the heating element thin-film based on oxide semiconductors
Valery E. Rodionov,
25-12-2012
Institute of Semiconductor Physics of National Academy of Sciences of Ukrain
Object of research - the technique of infrared heaters on glass using as a heating element oxide semiconductor thin film layer. Purpose - to create a highly efficient infrared heater. Research method - vacuum RF magnetron deposition of films of oxide semiconductors, selection of appropriate additives and technological regimes of stability obtained films in operation since operation of the transmission of radiation received electrical parameters. Thin film oxide materials nowadays widely used in information displays, solar photovoltaic cells, optical filters, and other functional devices, opto-and microelectronics. With the possibility of varying the resistance of thin films of oxide degenerate semiconductors in a wide range and good adhesion to various substrates, we should expect widespread use data tapes for electric heating systems and devices. However, until recently the stability of film of oxide semiconductors at elevated temperatures boule low. We managed to create a stable thin films several oxide semiconductors with stable characteristics at elevated temperatures up to 250-300 0C. The results of this research, "Development of highly efficient infrared heaters general technical purposes of the thin-film heating element based on oxide semiconductors" presently being implemented at "steatite" pilot plant PWI im.E.O.Patona and planned for implementation in Pilot Plant Civil Aviation number 20. The base for the mass production of IR converters are manufacturing and supplying them lines rf magnetron deposition great performance. GLASS, OXIDE SEMICONDUCTOR degenerate, infrared radiation, STABILITY.
Забулонов Ю.А.
Заяц М.С.
Родіонов В.Є.
Хомченко В.С.
Шека Г.К.
2020-04-02
Updated: 2025-12-07
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