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Information × Registration Number 0212U008421, 0112U006937 , R & D reports Title Ultra fast transistors based on avalanche impact ionization and interband tunneling popup.stage_title Head Sizov F.F., Доктор фізико-математичних наук Registration Date 07-12-2012 Organization Institute of Semiconductor Physics of NAS of Ukraine popup.description2 Developed model allows to find characteristics inherent to TFETs vatious designs in different operation regimes. The expressions for th e tunneling current have been derived both in the conventional uniform-field approximation and taking into account the field nonuniformity in the tunneling area. At low values of the effective gate voltage, the area of the abrupt change of the drain current with the TFET low swing and high transconductance has been obtained. The boundaries of this area have been found, and the cause of its occurence has been esplained. The technological route of fabrication of MCT fieled effect transistor prototype with p-n junction between source and draine was improved. Its detectivity at T=77K and radiation frequency 77-78 GHz was studied. Product Description popup.authors Сизов Федір Федорович popup.nrat_date 2020-04-02 Close