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Information × Registration Number 0212U008456, 0111U000774 , R & D reports Title Research of latest semiconductor nanomaterials and their compounds for low-dimentional devices fabrication techniques implementation popup.stage_title Head Timofeyev V.I., Registration Date 14-12-2012 Organization Faculty of аircraft and space systems NTUU "KPI" popup.description2 The purpose of the work is the creation of an information modeling perspective nanometer semiconductor devices for ultrafast IC giga-and terahertz technologies and information management of their manufacturing. The subject of the work is to study the physical processes and physical and topological modeling of nanoscale electronic devices geterotranzistornih multilayer structures geterotranzistoriv with quantum dots, devices and structures with resonant tunneling for the development and deployment of their manufacture. The work is focused on mathematical modeling to develop theoretical foundations and development of promising nanoscale semiconductor devices for ultrafast IC giga-and terahertz technologies and information management of their manufacturing. In this work we show the possibility of modeling the electrical properties trinitridnih connections with various modifications of the crystal lattice in strong electric fields and proposed a set of input data, which provides for an adequate simulation. The proposed methodology and software tools for modeling the behavior of a wide range of nanoscale semiconductor devices, including geterobipolyarni transistors geterotranzistory with quantum dots, devices and structures with resonant tunneling: topology and design advanced nanometer semiconductor devices. Proposed in the mathematical models, algorithms and programs contribute to the creation of modern semiconductor components for telecommunications and signal processing systems, the development of nanotechnology. Product Description popup.authors Белявський Є.Д. Боль К.К. Москалюк В.О. Семеновська О.В. Фалєєва О.М. Федяй А.В. popup.nrat_date 2020-04-02 Close