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Information × Registration Number 0213U000509, 0112U004575 , R & D reports Title Investigation of effects of hot electrons in the semiconductor heterostructures with quantum wells which lead to appearance of the negative differential conduction in the ultra-high-frequency range. popup.stage_title Head Poroshin Volodimir Mikolayovich, Registration Date 13-02-2013 Organization Institute of physics NASU popup.description2 The electron transport in heterostructures with quantum wells under applied lateral (lying in the well plane) electric field and intraband far infrared emission of carriers under the conditions of real space transfer of carriers between wells and deep impurity centers in barriers, which is caused by electric field heating, has investigated both theoretically and experimentally. The dependencies of current on the field value (IVC) at different impurity concentrations are presented. It is shown that at high concentrations, when a self-consistent impurity well is formed in a barrier, the transfer of charge carriers into it from the main well may lead (in the case of availability of impurity compensation) to the negative differential conductivity. The calculation results for dependence of the electron temperature on the field strength obtained from solution of the balance equation between electric power supplied into the electron subsystem and the power they lose in the course of interaction with the phonon subsystem are presented. Also presented are calculation results for the integral intensity of emission by hot electrons in the black body model which are compared with experimental results for GaAs/AlGaAs heterostructures with selectively doped barriers. Product Description popup.authors Більовський Павло Антонович Вайнберг Віктор Володимирович Васецький Віктор Михайлович Винославський Михайло Миколайович Коротєєв Вадим В'ячеславович Кочелап В'ячеслав Олександрович Пилипчук Олександр Сергійович Порошин Володимир Миколайович popup.nrat_date 2020-04-02 Close