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Information × Registration Number 0213U001779, 0110U001427 , R & D reports Title Power and spectral description of detectors on the basis of semiconductor connection of A2B6 and A3B5 at the action of electromagnetic radiation optical and KVCH of ranges popup.stage_title Head Beletsky Mikola, Registration Date 12-02-2013 Organization Kharkov National University named after V.N. Karazin popup.description2 Object of study - semiconductor compounds A2B6, physical phenomena in them under the action of ultraviolet radiation, and devices based on these compounds to detect radiation. Purpose - to identify promising semiconductor compounds ZnSe, CdZnTe, and others to detect radiation from the infrared to the ultraviolet range, the design and development of photodetectors based on them, the study of the energy and spectral characteristics. Method of research - theoretical and experimental studies of the characteristics of compounds A2B6 (ZnSe, CdTe, CdZnTe) and their behavior when exposed to infrared, optical and UV radiation. Experimental studies of the energy and spectral characteristics of solar cells (Schottky diodes) based on A2B6 compounds (ZnSe, CdTe) with various metal contacts. The main results and their novelty. To create a UV detector at a range of 0.24-0.4 nm promising compound semiconductors A2B6 (ZnSe, CdZnTe), which best ensure the detection of UV range. For the detection of the signal and determine the level of radiation in the wavelength range 0.9-1.2 microns in theory, the possibility of selectively doped, layered semiconductor heterostructures n-AlGaAs-Ge, InAlAs-GaAs. Research on the use of additional barriers in heterostructures such as p-ZnSe n-CdSe discovered the possibility of transforming the frequency spectrum of the radiation in the other by selecting the electrical parameters of the material (the band gap, mobility) of a semiconductor that is output through the detector. The mechanisms of charge carrier collection, conversion and signal detection in structures with a potential barrier at the metal-semiconductor A2B6, depending on the contact metal (Pt, Pd, Ni, Au). Diodes with Pt, Ni contacts to demonstrate the advantages of the diodes with Pd. Theoretical calculations of the collection coefficient generated charge carriers show that for the efficient collection of carriers is necessary to use materials with optimum absorption and diffusion coefficients, the long lifetime of the charge carriers. The technology of obtaining Schottky contacts of Pt, Pd, Au, Ni. The experimental samples of photodetectors ZnSe, measured their current-voltage characteristics without irradiation and UV irradiation, confirmed the high spectral sensitivity of the contacts with Pt compared with contacts Ni. Testing results: based on fundamental research published 11 research articles in scientific journals and made 24 presentations at international conferences. Received one patent of Ukraine, filed four patent applications. Recommendations for the use of the results. Findings and recommendations can be used to develop new photodetectors of different frequency bands, including the ultraviolet, a technique of etching and wafer preparation for the deposition of metal contacts is original and photodiodes can create different spectral ranges. KEYWORDS: sources of short-wave UV radiation, semiconductor detectors; photomultiplication, a metal contact, Schottky diodes, heterostructures and semiconductors A2B6. Product Description popup.authors Антоненко Є Бабич Є. Воронкін Є Головко Л Гомон Є Забєлін С Каднікова О Клименко В Медведєв Н Мустецов М. Мустецов Т. Набока А Павленко Д Плотнікова О. Полянський М. Пушин В Рибка О. Холодов В Шеховцов М Шеховцов М popup.nrat_date 2020-04-02 Close