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Information × Registration Number 0213U002021, 0110U006027 , R & D reports Title Investigation of plasmon-phonon vibrations in semiconductor nanostructures under high electric currents popup.stage_title Head Belyaev Alexandr, Доктор фізико-математичних наук Registration Date 03-01-2013 Organization V.Lashkaryov Institute of Semiconductor Physics NAS popup.description2 It is shown that simplest plasmonic structure like metallic grid should provide effective interaction between external electromagnetic wave and dispersive plasmon vibrations of low-dimensional electrons. The properties of these structures should be used for registration, excitation and amplification of THz vibrations. Effect of the local field amplification within near-field zone allows observing variety non-linear effects under low external electromagnetic fields. Distribution of free carriers concentration in-depth and in-plane of n++/n0/n++-GaN diode structure has been determined with using confocal micro-Raman spectroscopy that should be taken into account in fabrication technology of Gunn diodes with vertical design. Technology of electro-chemical etching of n-type single crystals (GaAs, InP and GaP) in water and alcohol solutions has been elaborated. Microscopic study shows that InP-based porous layers possess the most perfect structure and should be considered as quasi-periodic ordered structures. The optic properties of SnO2/SiO2 composites based on porous Silicon have been investigated. Product Description popup.authors Дмитрук М.Л. Кочелап В.А. Стрельчук В.В. popup.nrat_date 2020-04-02 Close