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Information × Registration Number 0213U002157, 0112U003489 , R & D reports Title The electronic structure of silicon quantum dots in germanium popup.stage_title Head Yukhymchuk Volodymyr Olexandrovych, Доктор фізико-математичних наук Registration Date 16-01-2013 Organization Institute of Semiconductor Physics of National Academy of Sciences of Ukrain popup.description2 In this work we investigate the process of formation of silicon quantum dots embedded in the germanium matrix. In the transition to the Ge / Si heterostructures with silicon quantum dots localization of electrons must occur in a quantum dot, and the holes will be in bulk Ge, and their location can be at the hetero-Ge / Si. To achieve the goal of this research project was carried out in two directions. The first is to grow germanium nanoislands with a silicon core and germanium shell according to the classical Stranski-Krastanov. Another trend - growing by molecular beam epitaxy of silicon germanium quantum dots in the matrix according to the Volmer-Weber mechanism. In the first direction is set element distribution in the dome-shaped islands, formed by varying the growth temperature and the nominal thickness of the deposited Ge. The second direction is established that the main features of the formation of Si quantum dots in germanium there is a strong mixing of Si and Ge, and the implantation of dislocations in the islands in the earlier stages of growth than in the case of inverted system Ge / Si, which imposes significant restrictions on the modes of growth. Product Description popup.authors Валах Михайло Якович Джаган Володимир Миколайович Пономарьов Семен Семенович Янчук Ігор Богданович Яремко Анатолій Михайлович popup.nrat_date 2020-04-02 Close