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Information × Registration Number 0213U003714, 0108U000252 , R & D reports Title Optical properties investigation of layered semiconductor crystals and structures. popup.stage_title Head Zhirko Yu.I., Registration Date 27-02-2013 Organization Institute of physics NASU popup.description2 Objects of research: layered semiconductor crystals InSe and GaSe intercalated by hydrogen or doped by impurity by Cd, Zn, Ge, Sn atoms and irradiated by gamma-quanta; layered structures on the basis of these crystals. The purpose of job: to research of optical properties of layered A3В6 semiconductor crystals and structures with the purpose of development on their basis of element base of semiconductor sensor to controls ionizing radiation and solid-state hydrogen storages; to research of physical bases of management of optical and electronic properties of layered А3В6crystals at doping, intercalating (deintercalating) and irradiating them by gamma-quanta; to study of the physic-chemical processes proceeding in mentioned crystals at doping by impurity atoms, intercalating by hydrogen and irradiating by gamma- quanta. Methods of research: low-temperature spectral optical, radio-spectroscopy (EPR, NMR), SEM, EDS, HKL researches. In job the results of optical and SEM researches, radio-spectroscopy, EDS, and low-temperature optic-spectroscopy researches of layered А3В6 semiconductor crystals intercalated by hydrogen are considered, and also specially non-doped and doped by impurity atoms of Cd, Zn, Ge, Sn, which were irradiated with gamma- quanta with energy from 0 up to 34 MeV in dozes up to 1014 -quanta/cm2. With use of the described methods for the first time is experimentally shown, in particular, that crystals GaSe, as against crystals InSe, have significant amount of residual Se in interlayer space, which leaves a crystal during it annealing at T > 350 0C in vacuum. Doping of crystals by impurity of the second group of the Periodic table, or their irradiation of gamma-quanta results to healing of dot defects accordingly on Schotky and on Frenkel. Intercalation of InSe and GaSe crystals by hydrogen results in localization of exciton movement in a plane of crystal layers, that is caused by sharp change of dielectric constant crystal in interlayer space owing to occurrence molecular hydrogen in interlayer space of a crystal. The model of hydrogen entry in layered crystals is offered and the conclusions concerning application of layered crystals for accumulation of hydrogen are made. The results of job will have the large meaning during development of solid-state hydrogen storages both semiconductor element base and devices on their basis, in particular, of sensor controls of gamma- radiation. Product Description popup.authors Грехов Василь Михайлович Жирко Юрій Іванович Мельничук Оксана Петрівна Скубенко Микола Андрійович popup.nrat_date 2020-04-02 Close