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Information × Registration Number 0213U005119, 0112U000782 , R & D reports Title Investigation and optimization of thermal conditions for the growth of large-size Ti:sapphire crystals by the method of HOC popup.stage_title Head Nizhankovskiy Sergey Viktorovich, Registration Date 11-03-2013 Organization Institute for Single Crystals National Academy of Sciences of Ukraine popup.description2 The dependences of the characteristics of activator nonuniformity on the thermal conditions of the growth of the crystals and the parameters of the boundary diffusive layer at the crystallization front were determined. (100x100x50) mm3 Ti-sapphire crystals with high structure perfection were obtained. Testing of wide-aperture (50x50x25)mm3 laser element in high-power (100 Twt) laser system demonstrated the quality of the energy characteristics comparable with those of the best world samples. Product Description popup.authors Сліпушенко Сергій Васильович Ткачкеко Валентин фёдорович popup.nrat_date 2020-04-02 Close