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Information × Registration Number 0214U005471, 0109U004882 , R & D reports Title Development of methods for the study of contact systems of powerful light-emitting diodes using N(III) heterostructures with elements from third group popup.stage_title Head Konakova Raisa Vasiljevna, Vlasenko Alexandr, Registration Date 30-12-2014 Organization Institute of Semiconductor Physics of NAS of Ukraine popup.description2 І. Were developed methods of investigation of thermal resistance, which allows non-destructive study the heat sink in packaged LEDs, developed methods of accelerated degradation of LEDs to predict their behavior in the long-term use. For this layout was created device complex for measuring thermal resistance, time and temperature dependences of the energy efficiency of LEDs. Software has been developed to predict the behavior of the LED module, and to determine the best ways to connect the LED chip. Received a patent "A method of predicting degradation of LEDs and LED modules". ІІ. For express and informing diagnostics of power LED the express-method of control of electric active defects was developed for the InGaN/GaN heterostructures. It is based on the radiation of microplasmas at reverse voltages, as ionization and subsequent recombination of carriers, which is accompanied luminescence, takes place on the defects. A method is non-destructive and allows to visualize critical extended defects. InGaN/GaN heterostructures on the Sі, Sі and Al2O3 are tested. It is showed that electric and luminescent properties of microplasmas is connected with quality and reliability of heterostructures, and also with the density of threading dislocations, flux, tunnel and reverse currents, internal mechanical strains. Product Description popup.authors Велещук В.П. Киселюк М.П. Кудрик Я.Я. Шеремет В.М. Шинкаренко В.В. popup.nrat_date 2020-04-02 Close