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Information × Registration Number 0214U006788, 0110U005722 , R & D reports Title The methods and computer based equipment developement for nanocrystal memory samples diagnostics. popup.stage_title Head Nazarov Olexiy Mykolayovich, Registration Date 24-02-2014 Organization Institute of Semiconductor Physics of National Academy of Sciences of Ukrain popup.description2 Research object - heterocyclic, SiO2 (Si) / Si, Si/SiO2/Si, nanoclusters, nanocrystals, metrology. The Purpose - The purpose of the project is to development of methods for nonvolatile memory electrical properties diagnosing, which was created with dielectric floating gate of 2D layer of Si nanocrystals, and the creation of specialized diagnostic setup. Creation of software algorithms and software for their computer -based process control electro research at the facility. Testing of hardware and software for the test samples MOS -type nonvolatile memory transistor with nanoinclusions and specialized structures. In the fourth phase of the project has been developed experimental methods of diagnosing temporal processes of storage information in memory cells with nanoclusters after programming a permanent electric displacement and temperature of heating patterns as parameters of the experiment. Creation of software algorithms and writing based on them software executed in the environment of visual programming National Instruments LabView 8.5. In particular added the ability to program control and thermal stabilization time of heating of the sample during the long process of measurement that can last for hours. In the course of the process was investigated conserve battery nanocrystalline structures in memory with a single layer of nanoclusters in dielectric . The resulting time dependence of the charge flow of nanoclusters with different voltages and temperatures holding pattern as parameters and found slow and fast stages of the charge flow process. Added the ability to install a program variable interval between measurements for more accurate results for both parts of addiction. Determined that nanoscale memory cells in a severe impact measurement complete capacitance- voltage characteristics in the charge state of the insulator , and therefore proposed a method for determining the voltage flat areas on the basis of successive approximations. The physical mechanism for draining accumulated charge in the dielectric , which is associated with the activation process, and the calculated activation emission energy of charge in semiconductor nanoclusters during the discharge structure. SILICON, heterostructures, nanoclusters, nanocrystals, DIAGNOSIS, NVM. Product Description popup.authors Євтух В.А. Гоменюк Ю.В. Римаренко Н.Л. Турчаніков В.І. popup.nrat_date 2020-04-02 Close