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Information × Registration Number 0215U001830, 0113U001372 , R & D reports Title Kinetics of forming of quantum points in the InGaAs/GaAs system of low temperature CVD-method popup.stage_title Head Guba Sergey Konstantinovich, Кандидат технічних наук Registration Date 02-06-2015 Organization Lviv Polytechnic National University popup.description2 The generalized a theoretical model for the calculation of energy surface characteristics of the InAs quantum dots in the GaAs matrix is expounded. A model is based on the principles of nonequilibrium thermodynamics and physics of surfaces. In the article the results of calculation of the surface energy and adhesion physical quantities and pressures in the vicinity of ribs of InAs quantum points in the GaAs(100) matrix are presented. Using the Jung relation the reasons of the bending profile of the bottom of the quantum dot are established. The results of calculation can be used for estimation the mechanisms of tensions relaxation during the self-organization of InAs quantum dots in GaAs(100) matrix. In this paper defined basic kinetic parameters for the formation of an array of quantum dots of InAs in GaAs matrix using CVD epitaxial method. Product Description popup.authors Губа С.К. popup.nrat_date 2020-04-02 Close