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Information × Registration Number 0215U003062, 0114U000677 , R & D reports Title Developvent of the technology of growth of nanostructured carbonized materials and silicon carbide for opto- and microelectronics popup.stage_title Head Lysenko Volodymir Sergiyovych, Registration Date 19-01-2015 Organization Institute of Semiconductor Physics of National Academy of Sciences of Ukrain popup.description2 The system of the thermal annealing is modernized, that allows controlled to promote speed of heating and cooling of standards by moving of zone of warming-up. The mechanism of transformations of mechanical tensions is certain at heat treatment of tapes of SiC. On setting of the магнетроного besieging of thin-films Катод-1М is set and exhaust dual-link system of fall-over of gases, that provides control and adjusting of channel (in a count on clean nitrogen), : I channel - from 10 to 500 см3/min II channel - from 1 to 50 см3/min Product Description popup.authors Васін Андрій Володимирович Назаров Олексій Миколайович Русавський Андрій Вадимович popup.nrat_date 2020-04-02 Close