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Information × Registration Number 0215U003479, 0114U001982 , R & D reports Title Experimental technique design for measuring micro-pattern of light and temperature in high-power light emitting structures operated in extreme conditions popup.stage_title Head Malyutenko Volodimir, Registration Date 05-02-2015 Organization Institute of Semiconductor Physics of NAS of Ukraine popup.description2 The excess temperature distribution in 4 x 4 InGaN-based high-voltages light emitting diode array (LEDE) made in Ukraine was measured for the first time. It was shown that under rated current of 300 mA (~5 W continuous wave operation power) any local chip overheating remains well below 90 C and tentatively is unable to cause the device degradation or failure. As a result, it is revealed that home-made LEDEs could be potential high performance devices with further improvement of device technology. Based on novel approach of measuring and calculating electrical figures of merit we compared for the first time electrical efficiency of light emitting diodes (LEDs) made in USA (CREE) and South Korea (Seoul Semiconductors). Our tests have shown that only CREE microchips could be recommended as an initial base for lighting industry (and LED lamps in particular) in the country.5481 Product Description popup.authors Малютенко О. Ю. Сологуб В.В. Тесленко Г.I. popup.nrat_date 2020-04-02 Close