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Information × Registration Number 0216U001618, 0111U000760 , R & D reports Title The transport phenomena in the heterostructures with quantum wells based on III-V compounds. popup.stage_title Head Poroshin V.N., Registration Date 10-03-2016 Organization Institute of physics NASU popup.description2 The presented results are obtained from experimental investigations and analysis of mechanisms of electric conduction, galvanomagnetic and photoelectric phenomena in the selectively doped heterostructures based on Ge-Si and III-V semiconductor compounds with different kinds of quantum wells and -layers of impurity in the wells or adjacent barrier layers. The numeric calculation of the electron energy spectrum and mobility, spatial charge distribution, magnetoresistance magnitude have been carried out. Based on them, the models are developed which explain behavior of electron gas under the equilibrium conditions and conditions of heating up by strong electric field, in strong magnetic fields. The contribution of the impurity band into formation of the electron energy spectrum, its impact on the transport phenomena in the structures with -layers of impurity in the QW region have been analyzed. The dependence of the shallow impurity parameters on its position in QW has been studied. The recommendations on possible application of results in development of different kinds of electronic and optoelectronic devices are given. Product Description popup.authors Більовський Павло Антонович Бондар Віталій Михайлович Вайнберг Віктор Володимирович Васецький Віктор Михайлович Винославський Михайло Миколайович Гуденко Юлія Миколаївна Пилипчук Олександр Сергійович Порошин Володимир Миколайович Сарбей Олег Георгійович Фролова Олена Костянтинівна. popup.nrat_date 2020-04-02 Close