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Information × Registration Number 0216U002784, 0115U005674 , R & D reports Title The development of the technology route for the solar cells manufacturing. Production and testing of the prototype samples of solar cells. popup.stage_title Head Ivashchuk Anatolii, Кандидат технічних наук Registration Date 06-10-2016 Organization Research Institute of Applied Electronics of Natoinal Technical University of Ukraine "KPI" popup.description2 It is shown that for manufacturing of the silicon solar cells there is need to use the wafers with volume resistivity greater than 1 Ohm*cm, that is necessary for preventing of the rapid degradation of the solar cells efficiency, but should be considered as well the reducing of the short circuit voltage of the solar cells while reducing the doping level of base region. So now the optimal doping level of the base region for silicon wafer solar cells is determined as 1,5-2,5 Ohm*cm. The parameters of the emitter layer for maximum conversion efficiency of PV cells are calculated. Based on the possibility of the creating of the contact with minimal transition resistance the surface impurity concentration level of (1,5...2,3)*10^20 cm^-3 is set. For minimization of the light reflection from the surface of PV cells it is necessary to form an ARC film on its surface, which refractive index is close to 2. But taking into account the operation of solar cells in the photovoltaic module (where PV cells are separated from the air with the glass plate and ethylene-vinyl acetate film) it value should be close to 2,2. Developed technology route has allowed to produce solar cells with parameters that meet the requirements of the mobile solar power plants.54815481 Product Description popup.authors А. Іващук А. Гетьман А.Воронько М. Душейко М. Жовнір М. Фадєєв Н. Кавраська popup.nrat_date 2020-04-02 Close