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Information × Registration Number 0216U003919, 0111U002515 , R & D reports Title Research, development and diagnostics of semiconductor devices, microwave and infrared nanophotoelectronacs popup.stage_title Head Sizov F.F., Доктор фізико-математичних наук Registration Date 24-02-2016 Organization Institute of Semiconductor Physics of National Academy of Sciences of Ukrain popup.description2 Purpose - Set and examine physical phenomena and effects in semiconducting micro- and nanostructures that can be used to create modern components for infrared and terahertz spectroscopy and Photoelectronics. The method of research - experimental and theoretical study of photoelectron and electrical phenomena in semiconductor bulk and thin film structures. Made line of semiconductor radiation detectors for THz / sub-THz spectral range based on narrow-gap semiconductor epitaxial layers CdxHg1-xTe interhovanymy of metal antennas. The possibility to use THz / sub-THz vision of the classical method of creating optics - precision lathes for further processing of the surface and using 3D printing. For imaging at THz / sub-THz range was assembled stand and held its improvement. The obtained image to radiation of 140 GHz. The interrelation between technological modes of cultivation double heterojunctions p + -InP / n- InGaAsP / n- InP by liquid-phase epitaxy and their physical properties. It is shown that the use of zinc as an acceptor impurity doping InP diffusion causes the formation of p-n transition in a layer of n-InGaAsP, causing maximum bias electroluminescence spectrum of long-wavelength region and reducing power infrared radiation. The calculation of the lifetime and at temperatures of 300 K for the equilibrium hole concentration range P0 = 1 1015 - 1 101 cm 3 based competition interband radiative recombination and Auger. Established that the temperature dependence of the lifetime of NNZ p-InAs with P0 = 1016 cm-3 can be explained by the three main channels of recombination - radiative, and CHSH CHLH. Spent modes photoelectrochemical method of forming two-dimensional macroporous silicon structures, cleaning surface structures and thermal oxidation. Theoretically investigated the thermodynamic properties of the ordered porous environment - air photon and the impact of oksydyzatsiyi the spectrum of the photonic crystal. Established that effective relaxation time of photoconductivity macroporous silicon structures defined barrier mechanism. Product Description popup.authors Є.О Білєвич Іванов В.І. Андрєєва К.В. Апатська М.В. Барсукова Н.О. Бойко В.А. Бреславець П.Г. Бунчук С.Г. В.В. Тетьоркін В.П. Рева Глушко Є.Я. Голенков О.Г. Гуменюк-Сичевська Ж.В. Дмитрук Н.В. Духнін С.Є. Забудський В.В. Калістий Г.В. Карась М.І. Конін К.П. Корінець С.В. Кролевець М.М. Кухтарук Н.І. Л.А. Карачевцева Лисюк І.О. Литвиненко О.О. Лученко А.І. М.В. Вуйчик Морозовська Д.В. Оніщенко В.Ф. Паршин К.А. Пляцко С.В. Рашковецький Л.В. Савкіна Р.К. Садовнікова М.Л. Сапельнікова О.Ю. Сахно М.В. Свеженцова К.В. Смірнов О. Б. Смолій М.І. Старий С.В. Стронська О.Й. Удовицька Р.С. Цибрій З.Ф. Шевчик-Шекера А.В. Шевчук Н.Ю. popup.nrat_date 2020-04-02 Close