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Information × Registration Number 0216U005713, 0111U006258 , R & D reports Title Physical fundamentals of processes of formation semiconducting nanostructures for devices of electronics and photonics popup.stage_title Head Skryshevsky Valeri, Доктор фізико-математичних наук Registration Date 09-02-2016 Organization Taras Shevchenko Kiev university popup.description2 Mechanisms of charge carriers trapping by structure defects in A3B5 semiconductor materials were determined. Possibility of utilization of structures with InAs quantum dots in the region under gate and structures with Si nanoclusters in SiO2 dielectric matrix for memory devices application were investigated. Parameters of amorphous layer are optimized to increase photovoltaic converters efficiency due to additional absorption photons with energy less than 1.12 eV. Powders on a base of nanostructured porous silicon were proposed to use for hydrogen storage. Adsorption of polar molecules in Ті-ТіО2-рSі structures was shown to change both current value and current-voltage dependence behavior. Technology of layered structures formation with silicon nanocrystals was elaborated to use in the elements of energy-independent nanocrystalline memory (NVRAM). By optimization of GaAs deposition parameters and Si substrate temperature it is possible to create quantum dots systems for optoelectronics devices. Product Description popup.authors Іванов Іван Іванович Ільченко Володимир Васильович Вербицький Володимир Григорович Гаврильченко Ірина Валеріївна Евтух Анатолій Антонович Козинець Олексій Володимирович Литвиненко Сергій Васильович Мілованов Юрій Сергійович Манілов Антон Ігорович Марін Володимир Володимирович Опилат Віталій Яковлевич Скришевський Валерій Антонович Циганова Ганна Іскаківна Шкавро Анатолій Григорович Шулімов Юрій Григорович popup.nrat_date 2020-04-02 Close