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Information × Registration Number 0216U005826, 0114U004124 , R & D reports Title Formation and properties of Si/SiO2/Si geterostructures with Si nanoclusters buried in dielectric film: experiment, modelling and carbon influence popup.stage_title Head Litovchenko Vololimir Grigorovich, Registration Date 16-02-2016 Organization Institute of Semiconductor Physics of National Academy of Sciences of Ukrain popup.description2 For the first time the kinetics of formation of silicon nanoparticles in the process of phase separation in thermally grown SiOx film has been studied. In the approximation of the diffusion model of the formation of spherical silicon particles at thermally phase separation the diffusion coefficients of atoms in SiOx film have been obtained. In the PL spectra of SiOx films the two major bands are observed near 900 and 750 nm, which correspond to crystalline silicon and amorphous inclusions, respectively. At temperatures of 300-500 ° C formation of an amorphous phase of silicon goes, at 900-1000 ° C - the crystal one. The model of formation nanoinclusions silicon embedded in an oxide matrix is proposed. It is shown that implantation of carbon leads to additional emission bands of nanoclusters in the visible spectrum. Physical mechanisms of the effects observed are proposed. Product Description popup.authors Лісовський І.П. Литовченко В.Г. Мельник В.П. Оберемок О.С. Попов В.Г Романюк Б.М. Саріков А.В. popup.nrat_date 2020-04-02 Close