Updated: 2025-12-17
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0216U007616, 0116U006013 , R & D reports
Ordered nanostructures on silicon surfsce for high efficient photovoltaic cells
Evtukh Anatoliy Antonovych,
23-12-2016
Institute of Semiconductor Physics of National Academy of Sciences of Ukrain
The report is supplied in a single volume and contains 94 pages, including 45 figures, tables 3, references 118. Keywords: micro- and nanostructured surfaces, silicon nanowires, metal catalytic chemical etching, chemical etching, photoelectric cells. The purpose of the project: Research and development of ordered nanostructures, namely, the vertical nanowires on a silicon surface, the study of their optical, electrical and photovoltaic characteristics for high-performance photovoltaic cells. As a result of the work the technologies of silicon nanowires and silicon composite structures pyramids- silicon nanowires formation on the silicon surface by chemical etching (anisotropic and metal catalytic chemical etching) have been developed. It is shown that the method of nonelectric chemical etching (MacEtch) can be regarded as an effective and relatively inexpensive method for texturing of the surface of the silicon substrate. This method allows to obtain the structures with different morphology and distribution on the substrate surface. In particular, the using of catalytic metal chemical etching MacEtch method allowed to obtaine the arrays Si nanowires with the diameter from 60 to 250 nm and the length of 2 m to 10 m. The possibility of obtaining of the regular nanowhiskers using a modified method MacEtch, comprising nanosfere lithography using colloidal silica nanospheres, which serve as a mask during the deposition of the catalyst metal by thermal evaporation has been shown. By selecting the optimum concentration of the etchant, you can change the diameter of the nanospheres and thus obtaib the nanowhiskers of the desired diameter. The effect of spacing and diameter nanoviskeramy on the photoelectric parameters of the structures based on them. The photovoltaic cells based on silicon nanowire structures has been formed and their characteristics has been studied.
Євтух Анатолій Антонович
Братусь Олег Леонідович
Парфенюк Павло Васильович
Чудовська Галина Вікторівна
2020-04-02
Updated: 2025-12-17
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