Search academic texts

Information × Registration Number 0217U000021, 0115U004262 , R & D reports Title "Experimental and theoretic studies of electrical and microwave properties of nanostructures and electronic devices based on the wide-gap semiconductor materials" popup.stage_title Head Belyaev Alexandr, Доктор фізико-математичних наук Registration Date 05-01-2017 Organization Institute of Semiconductor Physics popup.description2 We studied electric current and noise in planar GaN nanowires (NWs). The results obtained at low voltages provide us with estimates of the depletion effects in the NWs. For larger voltages, we observed the space-charge limited current (SCLC) effect. The onset of the effect clearly correlates with the NW width. For narrow NWs the mature SCLC regime was achieved. The results are supported by noise effects studied in the NWs. At low voltages, we found that the normalized noise level increases with decreasing NW width. In the SCLC regime, a further increase in the normalized noise intensity (up to 104 times) was observed, as well as a change in the shape of the spectra with a tendency towards slope -3/2. We suggest that the features of the electric current and noise found in the NWs are of a general character and will have an impact on the development of NW-based devices. Product Description popup.authors Алейніков Андрій Борисович Бєляєв Олександр Євгенович Коротєєв Вадим В'ячеславович Кочелап Вячеслав Олександрович Наумов Андрій Вадимович Райчева Валентина Григорівна Сингаївська Галина Іванівна popup.nrat_date 2020-04-02 Close