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Information × Registration Number 0217U006859, 0117U003445 , R & D reports Title Development of methods and techniques of fabrication of Cd(Zn)Te semiconductor-based X/gamma-ray detectors with high resolution for security and diagnostics instruments popup.stage_title Head Gnatyuk Volodymyr Anastasiyovych, Registration Date 20-12-2017 Organization Institute of Semiconductor Physics popup.description2 Defined modes stimulated laser treatment end it is shown that the laser irradiated samples of previously deposited film In doping is formed and p-n junction in the surface layer of the crystal investigated its electric and photovoltaic properties. Settings experimental diodes made of p-n transition In / CdTe / Au evidence of effectiveness and prospects of the developed method to create based on these barrier structures sensitive detector elements for X-ray and gamma radiation Product Description popup.authors Левицький Сергій Миколайович popup.nrat_date 2020-04-02 Close