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Information × Registration Number 0218U001494, 0115U003691 , R & D reports Title Features of the dislokation luminescence of p-Si crystals popup.stage_title Head Pavlyk Bogdan, Registration Date 14-02-2018 Organization Ivan Franko National University of Lviv popup.description2 The work devoted to the establishment of dislocation-related luminescence nature of light emitting structures based on p-Si. The paper presents research of defect subsystem restructuring in subsurface lauer of these structures under the action of local and external elastic deformation, plastic deformation and high temperature annealing in the flow oxygen atmosphere. The mechanism and process of manufacturing of silicon crystals which lead to high efficiency light-radiating structures are represented. It is shown that the local deformation of the subsurface layer of silicon is capable to getter defects and impurities learned from volume to surface of crystal by dislocations. This type of deformation formed as a result of lattice parameter mismatch of matrix and the metal film materials. Such defects together with dislocations generate complex systems that may affect the recombination processes in the subsurface layer of the semiconductor. The composition and structure of the defect subsystem of light emitting structures based on p-Si crystals are established. Recombination model for such structures is based on these researches on silicon with a high concentration of dislocation. Product Description popup.authors Костик Людмила Василівна Лис Роман Мирославович Павлик Богдан Васильович Слободзян Дмитро Петрович popup.nrat_date 2020-04-02 Close