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Information × Registration Number 0218U001947, 0118U001459 , R & D reports Title Doped composite oxide materials for photonic applications popup.stage_title Head Markevich Iryna Vasylivna, Registration Date 26-12-2018 Organization Institute of Semiconductor Physics popup.description2 The object of research - undoped and doped with manganese phosphor of MgO-TiO2 and ZnO-MgO-TiO2, sintered by high-temperature solid state reaction; the films and multilayer structures of ZnO, simultaneously doped with Tb3+ and Eu3+ ions deposited by high-frequency magnetron sputtering. The goal of research work is to elucidate the nature of excitation and radiative centers responsible for "red" luminescence in nominally undoped materials containing the phases of magnesium (zinc-magnesium) titanates, to develop the technological approaches for synthesis of ZnO-MgO-TiO2 phosphors with "white" emission spectrum, to elucidate the paths of energy transfer in structures based on ZnO, simultaneously doped with Tb3+ and Eu3+ ions. Research methods - photoluminescence, Raman scattering, X-ray diffraction, electron paramagnetic resonance, diffuse reflectance spectroscopy, transmittion electron microscopy, energy dispersive X-ray spectroscopy, secondary ion mass spectrometry. It is shown that the narrow band of "red" photoluminescence (PL) of phosphors containing crystalline phases of magnesium (zinc-magnesium) titanates is caused by optical transitions of Mn4 + ions in these phases. The optimal regimes for the synthesis of phosphores based on ZnO-MgO-TiO2 with white PL spectrum and (MgO-TiO2): Mn phosphores with intense red PL are established. It is shown that the addition of 0.5 wt. % Li allows increasing in several times the intensity of PL in these phosphores. It is shown that the accumulation of impurities near the silicon substrate in the zinc silicate phase in ZnO films doped with terbium and europium ions, as well as the reduction of the thickness of the terbium-doped layer in multi-layer structures ZnO, enhances the process of energy transfer from Tb3+ ions to Eu3+ ions. It is suggested that this is due to a decrease in the distance between rare earth ions and the fact that zinc silicate is the better matrix for embedding rare earth ions compared to ZnO. Product Description popup.authors Борковська Людмила Володимирівна Корсунська Надія Овсіївна Стара Тетяна Русланівна Хоменкова Лариса Юріївна popup.nrat_date 2020-04-02 Close
R & D report
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Head: Markevich Iryna Vasylivna. Doped composite oxide materials for photonic applications. (popup.stage: ). Institute of Semiconductor Physics. № 0218U001947
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