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Information × Registration Number 0218U002092, 0116U002528 , R & D reports Title The physical basis for the functioning of the new generation of high-performance solid-state detectors based on nanostructures popup.stage_title Head Skryshevsky Valeri, Доктор фізико-математичних наук Registration Date 17-01-2018 Organization Taras Shevchenko Kiev University popup.description2 Properties of nano-composite structures, pattern of surface interaction with gas and liquid phases, and also conversion of the primary information to electrical signal in nanoelectronics and sensor devices were clarified. To analyze water vapor influence on electrical properties of porous GaAs, method of impedance spectroscopy was applied. Features of photoelectrical recombinational sensor were analyzed. Surface distribution of photocurrent and photocurrent vs. surface voltage curves analysis was shown to serve as effective tool to detect water solution of carbon nanotubes with adsorbed sulfanol. Hydrogen liberation in chemical interaction of porous silicon (PS) with water becomes steady at portioned addition of PS powder to reaction camera with interval less than one minute. Main conductivity mechanisms of SiOx layers after laser annealing were found out. Algorithm of artificial neuron network (ANN) suitable for express analysis of gas and liquid ambient composition was designed. By means of X-Ray structure analysis, atom force and Kelvin probe microscopy techniques the structure of near-surface layer of Si-Gd-O system was determined. Product Description popup.authors Бунак Сергій Валерійович Гаврильченко Ірина Валеріївна Евтух Анатолій Антонович Козинець Олексій Володимирович Литвиненко Сергій Васильович Мілованов Юрій Сергійович Манілов Антон Ігорович Марін Володимир Володимирович Опилат Віталій Якович Пилипова Ольга Вікторівна Скришевський Валерій Антонович Федорченко Микола Іванович Циганова Ганна Іскаківна Шулімов Юрій Григорович popup.nrat_date 2020-04-02 Close