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Information × Registration Number 0218U002326, 0116U001542 , R & D reports Title Active mediums for solid-state thermo- and electromagnetic radiation sensors popup.stage_title Head Pavlyk Bogdan, Registration Date 14-02-2018 Organization Ivan Franko National University of Lviv popup.description2 The work is aimed at extending the class and creating new functional materials for sensor electronics; developing the new systems of chalcogenide glasses suitable for biological sensors in the infrared spectral range; forming stable and high-sensitive semiconductor and oxide sensors that operating in extreme conditions. The subject of the study is the processes of transferring the energy of electronic excitations; the generation of electromagnetic radiation in the studied materials and structures; the establishment of the relationship between the conditions of the synthesis of materials and their luminescence properties; processes of the evolution of structural defects in silicon p-n structures. The effects of the introduction of gallium into As-Se-Te-based glass have been studied, for the first time. New environments for biomedical sensors have been obtained on the basis of nanostructured glass systems of GaxAs30-xSe50Te20 doped with rare earth ions of optimal operational parameters for the registration of early pathologies. The technology of synthesis has been developed and the series of MgGa2O4: Mn and MgGa2O4: Mn, Eu polycrystalline samples and garnets of Ca3Ga2Ge3O12 with different concentrations of Eu3+ ions have been obtained. The optimal concentration of Eu3+ activator in the oxides has been established. It is shown that the studied oxides are promising for the use as "red" phosphors. It was found that the introduction of oxygen atoms into the near-surface layer of silicon by the method of high temperature diffusion (T ? 1300 K) is accompanied by the formation and increase of the concentration of the oxygen dislocation complexes and thermo-donors, which are responsible for the band (? = 1.54 microns) in the electroluminescence spectrum. The high-temperature annealing of silicon light-emitting structures lasting more than 1 hour increases the temperature stability of the electroluminescence centers. A method that allows creating stable in high temperature range and high-effective light-emitting structures on the basis of p-Si with a high concentration of dislocations (1010 cm-2) has been developed. A method for increasing the radiation resistance of silicon transistor thermo-sensors is offered. The method which is based on previous low-dose irradiation with subsequent thermal annealing and temporal relaxation according to the corresponding program (protected by a patent (utility model)). The modern level of studies carried out in the framework of this research is confirmed by the publications of the obtained results in a large number of rating professional journals with a high impact factor. In addition, the results were discussed at national, international scientific conferences and protected by tree utility model patents. Product Description popup.authors Грипа Андрій Сергійович Зоренко Тетяна Евгенівна Ковальчук Надія Орестівна Костик Людмила Василівна Кушлик Маркіян Олегович Лис Роман Мирославович Лучечко Андрій Петрович Михалевич Надія Юліанівна Павлик Богдан Васильович Шикоряк Йосип Андрійович Шпак Любов Михайлівна Шпотюк Ярослав Олегович Яровець Ігор Романович popup.nrat_date 2020-04-02 Close