Search academic texts

Information × Registration Number 0218U003033, 0117U002880 , R & D reports Title Doped composite oxide materials for photonic applications popup.stage_title Head Markevich Iryna Vasylivna, Registration Date 12-01-2018 Organization Institute of Semiconductor Physics popup.description2 The objects of the study are ZnMgO films produced by screen printing and solid phase reaction; ZnMgO ceramics, fabricated by the method of high-temperature solid-phase reaction; undoped ZnO films and ZnO films doped with Tb3 + and Yb3 + ions produced by RF magnetron sputtering. The goal of the work is to determine the regimes of thermal annealing which influence the structural and optical properties of ZnMgO films and ZnO films doped with Tb3 + and Yb3 + ions in order to control their luminescence spectrum. Research methods - photoluminescence, Raman scattering, X-ray diffraction, transmission electron microscopy, scanning transmission electron microscopy, X-ray fluorescence spectroscopy with energy dispersion. It is found that formation of ZnMgO hexagonal phase begins at 700 ° C and reaches a desired composition at 1000 ° C. It s found that the intensity of exciton and defect-related luminescence of ZnMgO recorded from the surface of the films and ceramics is 100 times smaller than those recorded from the bulk of the samples. It is shown that thermal annealing of ZnMgO in zinc vapors increases the intensity of luminescence on the surface of the samples in 100 times for defect-related one and in 10 times for exciton luminescence. It is shown that thermal annealing of ZnO films doped with Tb3 + and Yb3 + ions results in relaxation of stresses and redistribution of impurities across the film. It is found that an increase of the annealing temperature from 600 to 900 ° C leads to an increase in the luminescence intensity of Yb3 + ions and a decrease of the luminescence intensity of Tb3 + ions as well as to the formation of Tb2O3 crystalline phase. It is shown that the annealing temperature of ZnO films doped with rare earth ions should not exceed 600-700 ° С. Projected assumptions about the development of the research object are the improvement of the methods of fabrication of films and ceramics of zinc-magnesium oxide and the films of zinc oxide doped with rare earth ions characterized by high intensity of photoluminescence of native defects and electroluminescence of rare earth ions, that can be used for the fabrication of light-emitting devices of visible spectral range. Product Description popup.authors Борковська Людмила Володимирівна Стара Тетяна Русланівна Хоменкова Лариса Юріївна popup.nrat_date 2020-04-02 Close