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Information × Registration Number 0218U100085, 0118U005029 , R & D reports Title Development of the method of synthesis and research of physicochemical properties of nanosized and cdTe based structures for light-emitting and detecting elements popup.stage_title Head Kapush Olha A., Кандидат хімічних наук Registration Date 26-12-2018 Organization V. Lashkaryov Institute of semiconductor physics popup.description2 The work is devoted to the improvement of existing and development of new effective methods for obtaining low-dimensional high-luminescent semiconductor structures, in particular nanocrystals (cadmium telluride), and the selection of polymers for further incorporation of nanocrystals obtained into polymer films, suitable for use in the design of high-reliability and efficient light-emitting elements with high quantum yield and spectrum radiation controlled in a wide range of wavelengths, as well as the creation and improvement of the duct removed technology for the continuation of the radiation resource of ionizing radiation detectors. The method of colloidal synthesis in aqueous solutions obtained stable solutions of nominally homogeneous CdTe NK CdTe and Nd CdTe doped with manganese; the influence of synthesis duration, the ratio of the initial components, the nature of the doping impurity and additional heat treatment on the optical properties of the obtained structures was determined, the technique of incorporation of the obtained NKs into polymeric films was developed. copolymer vinyl acetate-acrylate. In order to increase the radiation stability of Cd0.95Zn0.05Te crystals, they were doped with an In mixture with different concentrations in the solid phase. An optimal concentration of In (~ 1017 cm-3) was found, in which the self-defects of the canfy type are maximally compensated. To simulate the process of accumulation of radiation defects in p-Cd0.95Zn0.05Te crystals, they were irradiated by fast electrons (dose 110 kGy). The possibility of restoring a defect structure of detector crystals p-Cd0.95Zn0.05Te after their irradiation by isothermal annealings in an argon atmosphere is shown. Possible mechanisms of radiation and thermally-stimulated reconstruction of the defect structure of the investigated crystals are analyzed. The analysis is based on the use of low-temperature photoluminescent spectroscopy data. Product Description popup.authors popup.nrat_date 2020-04-02 Close