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Information × Registration Number 0219U001105, 0116U002919 , R & D reports Title A study of changes in the physical properties of semiconductors and devices on their basis with different combinations of external influences. popup.stage_title Head Gaidar Galyna Petrivna, Registration Date 14-01-2019 Organization Sceintific Center "Inststute for nuclear reaseach National Academy of sciences Ukraine popup.description2 It was established that radiation doping with deuterons allows the formation of thin layers (30 - 200 micrometer) in the volume of silicon at depths up to 780 micrometer. These layers have properties different from those of the original matrix. Excitations of surface plasmons are found and the possibility to controlled change the optical parameters of composites during the introducing /deposition of Au nanoparticles into the porous matrix of Si (or into the porous SiO2 layer on Si surface) and additional thermal annealings by the methods of the reflection spectroscopy and spectral ellipsometry are showed. It was established that as a result of the action of high-temperature annealing on crystals of transmutation doped Si, the anisotropy of drag thermo-emf significantly increases in comparison with the initial crystals. The low-frequency (several hertz) fluctuations in the brightness of the electroluminescent glow, which occur in time with the current fluctuations, were detected in GaP crystals subjected to ultrasonic treatment at low temperature (77 K). The appearance of such oscillations is probably due to the formation of moving dislocation packages, which are involved in the creation of defects in dark lines and defects in dark spots. It has been established that an ultrasonic wave, passing through a GaP crystal, destroys the inhomogeneities on which microplasmas originate. Therefore, the ultrasonic treatment method can be used to improve the radiating properties of р-n-structures containing an increased concentration of defects, including crystals irradiated with fast particles. Product Description popup.authors Єрмольчик Володимир Олександрович Варніна Валентина Іванівна Воробйов Володимир Герасимович Конорева Оксана Володимирівна Ластовецький Володимир Францевич Литовченко Петро Григорович Макуха Олександр Миколайович Малий Євген Вікторович Пінковська Мирослава Богданівна Петренко Ігор Віталійович Старчик Маргарита Іванівна Тартачник Володимир Петрович popup.nrat_date 2020-04-02 Close
R & D report
Head: Gaidar Galyna Petrivna. A study of changes in the physical properties of semiconductors and devices on their basis with different combinations of external influences.. (popup.stage: ). Sceintific Center "Inststute for nuclear reaseach National Academy of sciences Ukraine. № 0219U001105
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Updated: 2026-03-19