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Information × Registration Number 0220U100455, 0117U000633 , R & D reports Title Synthesis of phases in thermodynamic regions of miscibility gap and technology of finite formation of electro-optic properties of heterostructures for special purpose detectors popup.stage_title Head Moskvin Pavlo P., Registration Date 20-01-2020 Organization Zhytomyr Polytechnic State University popup.description2 A thermodynamic method for calculating the immiscibility gap describing metastable and unstable states of semiconductor solid solutions of А3В5 and А2В6 classes has been developed and implemented. The thermodynamic analysis of the formation of layers of solid solutions of semiconductors, which are synthesized under conditions close to spinodal decay, is performed. The anode vacuum spraying method and the hot wall method were used for synthesis of super thin films of ZnHgTe solid solution in thermodynamic conditions that are close to the boundaries of the unstable state of the material. AFM and SME images were used as input to quantify the surface morphology of the obtained layers by multifractal analysis. The dependences of the multifractal spectra parameters, which describe the surface area and volume of nanoforms on the surface of the layers, from the technological conditions of it synthesis, are analyzed. The influence of the parameters of high-energy neutrons and fast electrons on the final electro-optical properties of ZnCdTe solid solutions is investigated. The conditions of irradiation of layers and heterostructures that provide the possibility of their realization in optoelectronic devices are found. Radiation stability and degradation processes of CdZnTe films under the influence of ionizing radiation are investigated. The technological process of synthesis of semiconductor layers by the method of detonation epitaxy has been developed. By this method Pb0 and ZnO layers were synthesized . The quantitative description of the surface morphology was made by the multifractal analysis method. Experimental data were obtained for the conditions of IR laser epitaxy of А2В6 semiconductors. The conditions for laser epitaxy of obtaining layers with controlled electro physical properties have been found, which can be used to create photosensitive structures for devices of modern special purpose electronics. Product Description popup.authors Beketov Gennadiy V. Dobriakov Volodimir L. Kazakov Anatolii I. Plyatsko Sergii V. Rashkovets’kyi Lubomir V. Skurativskyi Sergii I. Shapovalov Hennadii V. popup.nrat_date 2020-04-02 Close