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Information × Registration Number 0221U103681, 0118U000141 , R & D reports Title Radiation-resistant materials and photodetectors of optical and ionizing radiation on the base of telluride solid solutions popup.stage_title Head Sklyarchuk Valerii M., Доктор фізико-математичних наук Registration Date 24-02-2021 Organization Yuriy Fedkovych Chernivtsi National University popup.description2  The processes of melting and crystallization of solid solutions of Cd (Zn) Te were carried out. Based on the obtained data of differential thermal analysis, the mode of growing single-crystal Hg3In2Te6 ingots was developed. Based on the conducted research, the technology of crystals synthesis and growth of Hg3In2Te6, Hg2MnIn2Te6 and Cd (Zn) Te has been optimized to create optical and ionizing radiation detectors. For the first time, the rotation of the container at an angle to the horizon was applied, which allowed to align the crystallization front and increase the homogeneity of the material Hg3In2Te6, Hg2MnIn2Te6. Due to a comprehensive study of the temperature dependence of the currents of the ohmic region of the volt-ampere characteristic and SCLC, the relationship between the energy position and the degree of compensation of the deep level responsible for the dark conductivity and the detecting properties has been established. The electrical and spectrometric characteristics of Cr / p-CdTe / Pt detectors developed were studied, and a method for assessing the concentration of uncompensated impurities in semi-insulating Cd (Zn) Te and CdTe was developed. Studies of important parameters of photodiodes Cr / InHgTe / Cr convincingly evidence that the Hg3In2Te6 single crystal substrates with the nanostructured surface are quite promising for fabrication of Cr/Hg3In2Te6/Cr photodiode with significantly greater temperature stability, high photo-electromotive force and monochromatic current sensitivity compared to similar structures based on substrates with mirror surfaces. For the first time created diodes based on Hg3In2Te6, capable of operating at high reverse voltages - (250-300) V, which can work in conditions of high radiation. A technology has been developed that has significantly improved the quality of the rectifying contact of the diode structure based on CdTe and Cd (Zn) Te. Product Description popup.authors Dremlyuzhenko Serhii G. Kolisnik Michailo G. Sklyarchuk Valerii M. Fochuk Petro M. popup.nrat_date 2021-02-24 Close