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Information × Registration Number 0221U105140, 0120U105573 , R & D reports Title Promising semiconductor nanomaterials for flexible electronics: synthesis, development of printing methods and optimization of structural, optiсal and photoelectric properties. popup.stage_title Head Hnatenko Yurii P., Доктор фізико-математичних наук Registration Date 07-06-2021 Organization Institute of Physics of National Academy of Sciences of Ukraine popup.description2 Objects of research: thin films of ZnO, CuO and NiO, obtained by synthesis of nanoparticles by colloidal-polyol method, creation of nanoinks based on them and deposition of nanostructured films using the method of printing on 2D- and 3D printers, obtained under different physicochemical conditions their deposition. Subject of research: optical and luminescent properties of oxide semiconductor films, nature of defects in them and their energy structure, improvement of optical quality of investigated materials. Purpose: analysis of the current state of optical studies of film materials of oxide semiconductors. Establishment of the nature of electronic processes in ZnO, CuO and NiO thin films obtained using the method of printing on 2D and 3D printers, the nature of defects and their optical quality depending on the physicochemical conditions of their production. Research methods: optical methods of research of film materials, namely spectroscopic measurements of photoluminescence and absorption at room and low temperatures. The manifestation of the quantum-dimensional effect in the optical and photoelectric spectra of ZnO and CuO nanocrystallites formed in the volume of semiconductor nanoparticles has been identified and studied. Observation of the structure in low-temperature photoluminescence spectra due to exciton radiation indicates their very high optical and crystalline quality. The peculiarities of the formation of the band energy structure for CuO nanoparticles have been experimentally investigated and the energy scheme of optical transitions reflecting electronic processes in such materials has been proposed. It is shown that high-temperature annealing of ZnO, CuO and NiO films leads to the improvement of the crystal structure of nanoparticles by the formation of larger nanocrystallites. The optimal conditions for high-temperature annealing of films, which are characterized by good stoichiometry and low content of point defects, have been determined. Product Description popup.authors Bukivskii Anatolii Petrovych Gnatenko Yuriy Pavlovych popup.nrat_date 2021-06-07 Close