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Information × Registration Number 0222U000192, 0120U104992 , R & D reports Title Development of selection criteria for single-sector HPHT-diamond plates synthesized using new compositions of carbon solvents, for their use in Schottky diodes and heat sink substrates, substantiation of their design and physical principles of operation. popup.stage_title Head Strelchuk Viktor V., Доктор фізико-математичних наук Registration Date 04-01-2022 Organization VE Lashkarev Institute of Semiconductor Physics of the National Academy of Sciences of Ukraine popup.description2 Structural properties, impurity and defect composition, surface morphology, and electrophysical parameters of synthesized series of single crystals and HPHT-diamond plates of types IIa, Ib+IIa, and IIb were investigated and certified. Using micro-Raman spectroscopy, the phonon properties and structural quality of the synthesized series of HPHT diamond single crystals were evaluated. The features of the spatial distribution of boron impurities in multi-sector type IIb diamond plates have been studied using the micro-Raman mapping method. The defect-impurity composition, in particular, the content of nitrogen and boron impurities in single crystals of HPHT-diamond of types Ib+IIa and IIb, were studied using FTIR spectroscopy. The spatial distribution of boron and nitrogen impurities in multi-sector diamond plates has been studied by the method of micro-FTIR mapping. The low-temperature PL spectra were used to estimate the emitting properties and spectroscopic features of defects in the synthesized series of HPHT diamonds. It is shown that the differences in the electronic and optical properties of the studied diamonds of types IIa and Ib+IIa are due to different levels of incorporation of nitrogen impurities, depending on the technological conditions of synthesis. The structural morphology of the surface and the electrophysical parameters of the synthesized series of HPHT diamond single crystals have been investigated by means of probe microscopy. Using the conductive AFM method, the spatial distribution of the electrophysical parameters of various growth sectors of multi-sector plates was estimated. A test vacuum deposition of contacts for the formation of vertical structures of Schottky diodes on type IIb diamond plates has been carried out, and the first estimates of the current-voltage characteristics have been obtained. Product Description popup.authors Danylenko Ihor M. Malyuta Serhii V. Nikolenko Andriy S. Stubrov Yurii Yu. popup.nrat_date 2022-03-09 Close