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Information × Registration Number 0222U000733, 0120U000201 , R & D reports Title Ion-beam modification of the physical properties of heterojunctions based on thin films ZnO (ZnO/Si, ZnO/NiO, ZnO/SiC) popup.stage_title Head Kladko Vasil Petrovich, Доктор фізико-математичних наук Registration Date 18-01-2022 Organization VE Lashkarev Institute of Semiconductor Physics of the National Academy of Sciences of Ukraine popup.description2 The aim of this work is a comprehensive study of the effects that occur during ion-acoustic modification of the structure and electronic subsystem of A2-oxides and the development of methods for managing them is one of the real ways to create controlled nanotechnology. This task is the main ultimate goal of the project. Modification of ZnO epitaxial films grown on Si, NiO and SiC substrates in order to control their mobility of charge carriers, which will further allow the use of ZnO for instrument-oriented structures. Product Description popup.authors Kladko Vasyl P Liubchenko Oleksii I. Maksymenko Zoia V. Oberemok Oleksandr S. Petrenko Taras A Polishchuk Yuliia O Sabov Tomash M. popup.nrat_date 2022-03-09 Close