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Information × Registration Number 0222U001225, 0121U113827 , R & D reports Title Modification and investigation of optoelectronic properties of ZnO thin films and nanostructures for photovoltaic applications popup.stage_title Head Vasin Andrii V., д.ф.-м.н. Registration Date 25-01-2022 Organization VE Lashkarev Institute of Semiconductor Physics of the National Academy of Sciences of Ukraine popup.description2  A comparative analysis of the effects of methane and hydrogen as reactive agents in the deposition of ZnO films by the method of reactive RF magnetron deposition have been performed. The films were deposited by of RF magnetron sputtering of the ZnO powder target in the flow of an argon/methane or argon/hydrogen gas mixture using a modified KATOD-1M setup. Optical, electrical, morphological and structural properties were studied using optical transmission spectroscopy, photoluminescence spectroscopy, Raman light scattering spectroscopy, scanning electron microscopy and X-ray diffraction. The study focused on identifying the specific effects of hydrogen and carbon. Product Description popup.authors Gomenyuk Yurii V Kysil Dmytro V Nazarov Olexii M Rusavsky Andriy V Slobodyan Olexander M popup.nrat_date 2022-03-09 Close