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Information × Registration Number 0222U001900, 0117U000642 , R & D reports Title Search and creation of advanced semiconductor materials and functional structures for nano- and optoelectronics popup.stage_title Head Belyaev Oleksandr Ye., Доктор фізико-математичних наук Registration Date 04-02-2022 Organization VE Lashkarev Institute of Semiconductor Physics of the National Academy of Sciences of Ukraine popup.description2 Scientific work was carried out in three interrelated areas: - development of technological methods for creating new functional materials and structures for modern electronics, optoelectronics, information technology and sensors; - development of the latest experimental methods for diagnostics of semiconductor materials and structures with ultra-high spatial resolution (which is necessary when working with low-dimensional systems, multilayer heterostructures, thin-film materials, etc.) and research of their physical properties associated with various types of electronic and phonon excitations; - formation of physical principles for new generation devices. In particular, it was developed - technology for creating composite and nanostructured materials for optoelectronic functional instrumentation; - new technologies for creating functionalized materials for biomedical applications using chemical and plasmochemical methods; - technologies for forming stable low-dimensional semiconductor photosensitive and resonant tunnel structures and creating instrument layouts with improved characteristics based on them; - technologies for manufacturing nanomaterials and nanostructures for nanoelectronics and optoelectronics. The latest experimental methods have been developed to study the electrical, optical, and radio spectroscopic properties of quantum-dimensional binary, triple, and quadruple semiconductors and structures based on them synthesized by various methods. X-ray diffraction and probe-microscopic studies of new physical and technological defects in the development of materials and functional systems for Nano/Optoelectronics and related scientific and technical areas are also used. Physical principles are formulated and technological recommendations for creating the latest semiconductor devices are developed, namely:, - receivers of THz and sub-THz radiation based on low-dimensional structures; - functional structures of macroporous silicon with coatings for Nano - and Product Description popup.authors Yevtukh Anatolij Antonovych Bortchagovsky Evgen G. Valakh Mykhaylo Ya. Venger Yevgen F. Vlasenko Oleksandr І. Grynko Dmytro Oleksandrovych Karachevtseva Ludmila A Kladko Vasyl Petrovych Klyui Nikolay Ivanovich Korbutyak D. Kostylyov Vitaliy P. Kostyukevych Serhiy Oleksandrovych Kochelap Vyacheslav O Kykla Alexander L Lysenko Volodymyr S. Lytovchenko Volodymyr Grygopovych Mamykin Sergii Vasylovych. Maslov Volodymyr Petrovych Nazarov Oleksii M. Olikh Yaroslav M. Pavelets Sergiy Yu. Pekar Grygoriy S. Prokopenko І. V. Syzov Fedir F. Snopok Boris A. Sorokin Viktor M. Stronskyi Oleksandr V. Tomashyk Vasyl M Khomenkova Larysa Yu. Shutov Stanislav Victorovich popup.nrat_date 2022-03-09 Close