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Information × Registration Number 0223U000662, 0121U111868 , R & D reports Title Investigation of ultrathin chalcogenide films by surface-enhanced Raman spectroscopy popup.stage_title Head Hreshchuk Oleksandr M., Кандидат фізико-математичних наук Registration Date 17-01-2023 Organization VE Lashkarev Institute of Semiconductor Physics of the National Academy of Sciences of Ukraine popup.description2 During the realization of the scientific and technical project, SERS substrates with thin layers of semiconducting chalcogenide layers Se and As2S3 were manufactured and investigated. The implementation of substrates with thin chalcogenide layers was carried out by sputtering different thicknesses of the material on the surface of the SERS substrate. A study of the enhancementof the Raman signal from the investigated films was carried out and a detailed analysis of the obtained Raman spectra and the effects of the interaction of laser radiation with the chalcogenide material was carried out. Also, a comprehensive characterization of the obtained substrates was carried out, namely, both optical (absorption spectra, Raman light scattering) and morphological characteristics of the structures were investigated. Product Description popup.authors Isaieva Oksana F Mazur Nazar V. popup.nrat_date 2023-01-17 Close