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Information × Registration Number 0223U000675, 0118U003379 , R & D reports Title Investigation of the nature of structural and impurity defects, mechanisms and dynamics of recombination processes in non-homogeneous semiconductor materials. popup.stage_title Head Gnatenko Yurii P, Доктор фізико-математичних наук Registration Date 17-01-2023 Organization Institute of Physics of National Academy of Sciences of Ukraine popup.description2 The purpose of the work was to carry out comprehensive studies of the peculiarities of the crystal structure, electronic and excitonic properties, dynamics of recombination processes of bulk and film semiconductors doped with isovalent impurities and rare earth elements, as well as solid solutions based on them with the aim of developing new promising materials, in particular, for solar cells and radiation detectors. Such studies made it possible, in particular, for the first time to detect the manifestation of a magnetic polaron in the new semimagnetic semiconductors Cd1-XDyXTe for bound excitons and acceptor holes associated with the presence of uncontrolled impurity atoms Li and Na in such materials, and to determine their main characteristics (the characteristic energy of the polaron , contributions to the localization energy of the exchange field and thermodynamic fluctuations of magnetization). The nature and dynamics of recombination processes in crystals and thin nanostructured films of Pb1-XCdXI2 were studied and the gettering of the formation of the crystal structure of PbMnI2 alloys were established. The mechanism of пуееукштп of uncontrolled impurity atoms with rare earth elements of semiconductors (bulk and film) CdTe and CdS has been established. The studied semiconductor compounds are promising materials for the development of uncooled radiation detectors and efficient solar cells. Product Description popup.authors Bukivskyi Anatolii Petrovych Bukivskyi Petro Mykolayovych Vertegel Igor Grygorovych Gamernyk Roman V. Gnatenko Yuriy Pavlovych Zhemchuzhnikova Oleksandra Oleksandrivna Ovcharenko Oleksandr Ivanovych Stupak Anton Yuriyovych Tarakhan Ludmyla Mykolaivna Phurier Mykhailo Stepanovych Chesnokov Evgen Dmytrovych popup.nrat_date 2023-01-17 Close
R & D report
Head: Gnatenko Yurii P. Investigation of the nature of structural and impurity defects, mechanisms and dynamics of recombination processes in non-homogeneous semiconductor materials.. (popup.stage: ). Institute of Physics of National Academy of Sciences of Ukraine. № 0223U000675
1 documents found

Updated: 2026-03-21