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Information × Registration Number 0223U000914, 0122U001303 , R & D reports Title The formation mechanism of new metal-semiconductor nanomaterials as a result of the interfacial interaction of components popup.stage_title Head Bohatyrenko Serhii I., Кандидат фізико-математичних наук Registration Date 21-01-2023 Organization V.N. Karazin Kharkiv National University popup.description2 Original in situ research methods developed by the authors were used to solve the tasks. Thus, the quartz resonator technique, which has proven itself as a method of recording the formation of a liquid phase in condensed films, was used to establish the maximum limit of solid solubility of Bi in Ge. To study the kinetics and limits of temperature stability of the metastable phase formed, the methods of in situ electron microscopy and diffraction were used thanks to the design of the special object holder for the TEM-125K transmission electron microscope developed by the authors. As a result of the project: - the data obtained, for the first time, regarding the conditions for the formation of a metastable phase in the Bi-Ge system as a result of the significant dissolution of Bi in the semiconductor; - the maximum concentration of Bi that dissolves in germanium was determined for the first time; - experimental data on the temperature stability of the formed metastable solution depending on the size of the nanosystem were obtained for the first time; - for the first time, a systematic study of the kinetics of the formation of a metastable solid solution in the nanoscale Bi-Ge film system was carried out. Among the main results of the first stage, which can be used by representatives of the real sector of the economy, the following can be noted: providing a recommendation on the conditions for obtaining the metastable Bi-Ge phase, information on its stability depending on the annealing temperature and the size of the system. The information about changes in solubility in highly dispersed systems can help solve the stability issues of modern electronics components and is necessary for the development of new nanomaterials with controlled properties. These results will be of interest to manufacturers of small power supplies based on the thermoelectric effect for use in electronic implants such as cardiac pacemakers, neurological devices, pulse oximetry, pressure, biometri Product Description popup.authors Dukarov Serhii V. Petrushenko Serhii I. Sukhov Ruslan V popup.nrat_date 2023-01-21 Close
R & D report
Head: Bohatyrenko Serhii I.. The formation mechanism of new metal-semiconductor nanomaterials as a result of the interfacial interaction of components. (popup.stage: ). V.N. Karazin Kharkiv National University. № 0223U000914
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Updated: 2026-03-21