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Information × Registration Number 0223U001761, 0120U102202 , R & D reports Title Development of scientific and technological foundations for the fabrication of micro- and nanosystem elements based on main sensor semiconductor crystals and nanostructures popup.stage_title Head Druzhynin Anatoliy O., Доктор технічних наук Registration Date 02-02-2023 Organization Lviv Polytechnic National University popup.description2  The methods of obtaining, as well as the study of electrophysical characteristics on direct and alternating current of filamentary crystals and nanostructures (Si, Ge, SiGe, InSb, GaSb, GaAs) of a given composition, morphology, stoichiometry, doping level and geometric dimensions have been improved. A correlation was established between the features of changes in the electrical and magnetotransport properties of filamentary crystals and nanostructures (Si, Ge, SiGe, InSb, GaSb, GaAs) with different concentrations of doping impurities in a wide temperature range and high magnetic fields. The theoretical ideas about the mechanisms of hopping conduction in quasi-one-dimensional semiconductor structures have been developed. Experimental samples of sensor and conversion devices based on semiconductor micro- and nanocrystals (Si, Si-Ge, A3B5 compounds) have been developed, as well as multifunctional sensors as part of information and measurement systems, effective in difficult operating conditions (shock loads, radiation, vibrations, low and elevated temperatures). Product Description popup.authors Harasym Iryna Kutrakov Oleksii Liakh-Kaguy Natalia Nichkalo Stepan Ostrovskii Igor Temirova Olena Khoverko Yuriy popup.nrat_date 2023-02-02 Close