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Information × Registration Number 0223U002444, 0119U100357 , R & D reports Title Multifunctional nanostructured network composites based on glassy chalcogenides, chalcohalogenides and borates popup.stage_title Head Shpotyuk Oleg Iosypovych, Доктор фізико-математичних наук Registration Date 21-02-2023 Organization Vlokh Institute of Physical Optics popup.description2 As a result of the implementation of the II stage of the project, the effects of impurity nanostructuring of covalent-network glassy composites (CNGNC) based on glassy chalcogenides (GC), chalcohalides (GCH) and borates (GB) caused by the introduction of rare earth activators were investigated, their microstructural and optical characterization was carried out, in particular: - synthesized and prepared corresponding samples of impurity-modified glasses and ceramics of the GС type As/Ge-S/S-Ga (compositions As40Se60; Ga1(As0.4Se0.6)99; Ga2(As0.4Se0.6)98; Ga3(As0.4Se0.6)97; Ga4(As0.4Se0.6)96; Ga5(As0.4Se0.6)95), GCH type GeS2-Ga2S3-CsCl (compositions (80GeS2-20Ga2S3)100-x(CsCl)x, namely 80GeS2-20Ga2S3, (80GeS2-20Ga2S3)95(CsCl)5, (80GeS2-20Ga2S3)90(CsCl)10, (80GeS2-20Ga2S3)85(CsCl)15, as well as the optimized composition 65GeS2-25Ga2S3-10CsCl). GB Li2B4O7-CaB4O7-LiKB4O7 (compositions Li2B4O7:Ag and Li2B4O7:Gd,Ag, LiKB4O7:Ag and LiKB4O7:Gd,Ag, Li2B4O7:Er and Li2B4O7:Er,Ag), as well as LiB3O5; - the compositional features of the introduction of Ga into GC As/Ge-S/S-Ga, CsCl into GCH GeS2-Ga2S3, Ag and Cu into GB of Li2B4O7, CaB4O7, LiKB4O7 type were studied; their microstructure was investigated (by the methods of X-ray diffractometry of the first sharp diffraction peak (FSDP); electron paramagnetic resonance (EPR) and positron-electron annihilation spectroscopy (PEAS); - the optical characteristics were parameterized and a phenomenological model of impurity nanostructuring was worked out in CNGNC based on GC As/Ge-S/S-Ga, GCH GeS2-Ga2S3-CsCl-type and GB Li2B4O7-CaB4O7-LiKB4O7 and LiB3O5. On the basis of the obtained results, the methodology for the creation of impurity functional nanoinhomogeneities in CNGNC based on GC, GCH and GB with optimized characteristics for reproducible elements of optoelectronics, IR photonics, sensor and opto-telecommunication equipment was substantiated. Product Description popup.authors Adamiv Volodymyr T. Boyko Vitaliy T. Dudok Taras Hrygorovych Padlyak Bohdan V. Teslyuk Igor Mykhaylovych Shpotyuk Lyubov Yosypivna Shpotyuk Oleh Iosypovych popup.nrat_date 2023-02-21 Close