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Information × Registration Number 0223U002848, 0117U003398 , R & D reports Title Development of superconducting technology and multilevel metallization wiring submicron structures LSI / VLSI popup.stage_title Head Novosiadlyi Stepan P., Registration Date 13-03-2023 Organization Kolomyia Educational-Scientific Institute The Vasyl Stefanyk Precarpathian National University popup.description2  Report on Scientific research work: "Development of technology of superconducting metallization and multi-level wiring of submicron LSI/VLSI structures" 31 p., 7 figures, 1 table, 20 sources. The object of research is the elements of integral instrument submicrometer structures of LSI/VLSI. The purpose of the work is to develop the technology of manufacturing targets and magnetron deposition using films for multi-level wiring of GaAs structures on Si substrates. Research methods are a systematic method of cognition, a combination of general scientific and special research methods, analysis and synthesis, induction and deduction, abstraction and generalization. The technological aspects of the use of superconducting materials are considered and the possibility of manufacturing targets for magnetron deposition of films for the formation of cryoconductive wiring in GaAs-based LSI structures is shown. Technological methods and regimes have been defined and a highly effective technology for the production of cryoalloys based on Al, Nb, V with impurities of Si, Ge and PZM and magnetron formation of superconducting films from aluminum, niobium and vanadium alloys has been developed. In particular, the technological regimes (size of the ionic current, accelerating voltage, deposition rate, plasma composition, uniformity of the components across the diameter of the silicon substrate) that ensure the thickness of the films at the level of 0.6–1 μm have been established. Insignificant thermomechanical stresses (about 1 kg/cm2 ) and small grain size (~10 nm) will allow to achieve excellent adhesion of the deposited films and to form a topological pattern of submicron sizes by photolithography. The parameters and characteristics of GaAs field-effect Schottky transistors (Schottky barrier height 0.5–0.8 eV, imperfection factor 1.2–2, and Schottky barrier breakdown voltage 15–30 V) on homo- and heterostructures were studied and determined methods of increasing their speed / Product Description popup.authors Benko Taras H Holota Victor Ivanovych Gryga Volodymyr M. Dzundza Bogdan Stepanovych Когут Ігор Григорович Pavlyuk Myroslav F popup.nrat_date 2023-03-13 Close