Search academic texts

Information × Registration Number 0223U004433, 0120U105573 , R & D reports Title Promising semiconductor nanomaterials for flexible electronics: synthesis, development of printing methods and optimization of structural, optiсal and photoelectric properties. popup.stage_title Head Hnatenko Yurii P., Доктор фізико-математичних наук Registration Date 01-11-2023 Organization Institute of Physics of National Academy of Sciences of Ukraine popup.description2 The manifestation of the quantum-dimensional effect in the optical and photoelectric spectra of ZnO and CuO nanocrystallites formed semiconductor nanoparticles has been identified and studied. Observation of the structure in low-temperature photoluminescence spectra due to exciton radiation indicates their very high optical and crystalline quality. The peculiarities of the formation of the band energy structure for CuO nanoparticles have been experimentally investigated and the energy scheme of optical transitions reflecting electronic processes in such materials has been proposed. It is shown that high-temperature annealing of ZnO, CuO and NiO films leads to the improvement of the crystal structure of nanoparticles by the formation of larger nanocrystallites. The optimal conditions for high-temperature annealing of films, which are characterized by good stoichiometry and low content of point defects, have been determined. The value of the band gap (Eg) for Cu2MgxZn1-x SnS4 films was determined. The value of Eg varies from 1.47 eV for films with X=0 to 1.13 eV with X=1. It was established that the best optical quality is provided by films for solid solution at X ≤ 0.20, for which the value of Eg=1.28 eV. It is shown that the studied films can be used as an effective absorbing layer for solar cells of the third generation. It was established that the value of Eg in the case of indirect allowed transitions for the SnS compound is 1.15 eV. At the same time, it was found that the energy Eg for direct allowed transitions for SnS corresponds to 1.72 eV. It is shown that the value of Eg for the Sn2S3 crystalline phase is 1.08 eV and corresponds to forbidden direct transitions. The energy Eg for indirect forbidden band-band transitions for the SnS2 crystalline phase was determined, which is about 2.20 eV. A number of photoconductivity bands reflecting electronic band-to-band transitions in SnS and Sn2S3 compounds at energies of 1.15 eV and 1.08 eV, respectively, were detect Product Description popup.authors Bukivskii Anatolii Petrovych Gnatenko Yuriy Pavlovych popup.nrat_date 2023-11-01 Close