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Information × Registration Number 0223U004882, 0120U104975 , R & D reports Title Single crystals of gallium nitride GaN: obtaining under high pressure, structure, properties popup.stage_title Head Turkevych Volodymyr Z., Доктор хімічних наук Registration Date 07-12-2023 Organization V. Bakul Institute of superhard material of the National Academy of Sciences of Ukraine popup.description2  Тhe possibility of effective Ga,N-transfer, mainly under T-gradient conditions, using iron-based solvents was established. The first results on the growth of GaN crystals by the HP-HT method, which is widely used in the growth of high-quality diamond, are reported. The double and triple diagrams of the state and phase equilibria in the Fe-GaN system have been constructed both for normal conditions and at high pressures. The solubility of GaN in ARMCO-iron, iron nitride of Fe2-4N composition and (Co/Cr)eut alloy was experimentally studied by the method of “contact pairs”, which indicates significant dependences of the process dynamics on p,T,t-parameters (up to a pressure of 8.3 GPa) and the nature of the solvent. A certain specificity of heterogeneous nucleation and growth of GaN was observed in the case of a metal-like Fe-Ga-N alloy and an alloy containing In. The effects of texturing during aggregate growth and co-crystallization, with the capture of Fe impurities by the lattice, were revealed by X-ray and optical studies of the samples. Product Description popup.authors Kamenskyh Dmytro S. Kusch Olga V. Maziar Denis M. Patsik Andriiy M. Petrusha Ihor A. Polotnuk Serhii B. Romanenko Yaroslav M. Rumiantseva Yuliia Yu. Sadova Yuliia I. Tsykaniuk Bogdan I. Chernienko Olexandr I. popup.nrat_date 2023-12-07 Close