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Information × Registration Number 0224U001278, 0118U005516 , R & D reports Title Photostructural and photochemical effects in thin film materials based on arsenic and germanium chalcogenides doped with group II and group III elements popup.stage_title Head Gomonnai Oleksandr V., Доктор фізико-математичних наук Registration Date 19-01-2024 Organization Institute of Electronic Physics of the National Academy of Sciences of Ukraine popup.description2  Research project report: 109 pages, 27 figures, 1 table, 243 references. The aim of the project is to study the processes of formation of arrays of mesoscopic semiconductors in matrices of amorphous arsenic and germanium chalcogenides doped with Group II and Group III elements, upon illumination and thermal treatment. Series of technological processes of fabnrication of As2S3, As2Se3, GeS2 and GeSe2 glasses were performed and thermally evaporated Cd, In, and Zn-doped thin amorphous films were obtained. Based on the data of Raman spectroscopy, atomic force microscopy, energy-dispersive X-ray fluorescent spectroscopy and, X-ray photoelectron spectroscopy, charcateristics of the film surfaces were determined, homogeneity of their chemical composition was checked, character of the dopant distribution over the film surface as well as its variation over the film depth were studied. Raman spectroscopy showed that the material photofluidisation under laser illumination of certain energy, power density, and duration results in the formation of II–VI and III–V nanocrystals in amorphous As2S3:Cd, As2Se3:Cd, As2S3:Zn, As2Se3:Zn, As2Se3:In, GeS2:Cd, and GeSe2:Cd. Raman spectroscopy data confirmed the formation of arsenolite As2O3 crystallites on the As2S3 film surface under irradiation by a UV laser (325 nm) at power densities above kW/cm2. Such processes of photoinduced oxidation and formation of As2O3 crystallites do not occur at lower power densities as well as under illumination by visible laser light (514.7 and 632.8 nm). The results obtained show the possibilities of formation of II–VI nanocrystals in photosensitive amorphous chalcogenide matrices under laser illumination and demonstrate the applicability of approaches based on optical spectroscopy for nondestructive diagnostics of the chemical composition of matrix-embedded semiconductor nanocrystals and are important for technology and physics of semiconductor nanostructures. Product Description popup.authors Azhniuk Yurii Mykolaiovych Byrov Mykola Mykolaiovych Voynarovych Ivan Mykolajovych Hasynets Stepan Mykhailovych Gomonnai Oleksandr Vasylyovych Krasylynets Vasyl Mykolaiovych Kryshenyk Volodymyr Mykhailovych Lopushansky Vasyl Volodymyrovych Loia Vasyl Yuriiovych Popovych Kostiantyn Pavlovych Roman Ivan Yuriiovych Solomon Andrij Mykhailovych Chychura Ivan Ivanоvych popup.nrat_date 2024-01-19 Close