Search academic texts

Information × Registration Number 0224U001491, 0122U200830 , R & D reports Title Development of technology for growth of structures based on indium antimonide and production of test samples of photodiodes popup.stage_title Head Krukovskyi Semen I., д.т.н. Registration Date 23-01-2024 Organization Scientific Research Company "Electron-Carat"-Branch of Private Joint Stock Company "Concern-Electron" popup.description2  Technological instructions have been developed for the selection of temperature and time parameters of pulsed cooling of the substrate and doping modes of the p-InSb epitaxial layer, which ensure the crystallization of p-InSb layers 1-3 μm thick with a hole concentration of (0.5-5)•1015cm-3. A technological instruction for the formation of the n-InSb/p-InSb epitaxial structure has been developed. Experimental samples of p-InSb/n-InSb structures were made and their parameters were studied. A method of controlling the reverse currents in the p-n InSb junction was developed based on the study of the current-current characteristics of the test mesa photodiodes. Product Description popup.authors Izhnin Ihor I. Kost Yaroslav Ya. Krukovs'kyi Semen I. Prytulyak Bohdan B. Rejkin Borys O. popup.nrat_date 2024-01-23 Close