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Information × Registration Number 0224U002596, 0120U105573 , R & D reports Title Promising semiconductor nanomaterials for flexible electronics: synthesis, development of printing methods and optimization of structural, optiсal and photoelectric properties. popup.stage_title Head Hnatenko Yurii P., Доктор фізико-математичних наук Registration Date 20-02-2024 Organization Institute of Physics of National Academy of Sciences of Ukraine popup.description2 Heterostructures based on thin films of p-type semiconductors, namely kesterite compounds Cu2ZnSnS4, metal oxides CuO and NiO, as well as nanostructured films of p-type ZnO, obtained as a result of their synthesis by the colloid-polyol method and deposition of nanostructured films using developed nanoinks by printing on 2D and 3D printers. Purpose: analysis of the current state of optical research of nanostructured semiconductor heterostructures based on kesterites and metal oxides obtained by various physicochemical methods. Establishing the nature of electronic processes in the studied heterostructures obtained using the method of printing on 2D and 3D printers, the nature of defects and their phase state, as well as optical quality depending on the physical and chemical conditions of their production. It was established that ITO/ZnO:In/ZnO/CZTS:Mg and ITO/ZnO:In/ZnO/CuO heterostructures exhibit absorption and photosensitivity in a wide spectral range from 350 to 1000 nm, which in the short-wave spectrum region is associated with oxide layers zinc, and in the long-wave - due to absorption by kesterites or copper oxide. For the ITO/ZnO:In/ZnO/NiO heterostructure, absorption is mainly observed in the ultraviolet region of the spectrum. Absorption associated with the formation of a transition layer at the interface between ZnO layers and kesterites, copper or nickel oxides was also revealed. The value of Eg for the layers of ZnO, CuO, NiO and kesterites, the optical quality, the nature of defects and electronic processes in the investigated heterostructures, as well as their dependence on the annealing temperature, were determined. It is shown that the ITO/ZnO:In/ZnO/CZTS:Mg and ITO/ZnO:In/ZnO/CuO heterostructures are promising nanomaterials for the development of efficient solar cells, while the ITO/ZnO:In/ZnO/NiO heterostructure can be suitable for the development of the latest ultraviolet detectors. Product Description popup.authors Bukivskyi Anatolii P. Hnatenko Yurii P. popup.nrat_date 2024-02-20 Close
R & D report
Head: Hnatenko Yurii P.. Promising semiconductor nanomaterials for flexible electronics: synthesis, development of printing methods and optimization of structural, optiсal and photoelectric properties.. (popup.stage: ). Institute of Physics of National Academy of Sciences of Ukraine. № 0224U002596
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Updated: 2026-03-21