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Information × Registration Number 0224U032039, 0123U102727 , R & D reports Title The influence of size effects on the electrophysical properties of graphene-ferroelectric nanostructures popup.stage_title Head Morozovska Hanna М., Доктор фізико-математичних наук Registration Date 15-07-2024 Organization Institute of Physics of National Academy of Sciences of Ukraine popup.description2 The object of research is ferroelectrics, graphene, graphene-ferroelectric nanostructures and complexes. The subject of research is dimensional effects of electrophysical, polar, magnetic and magnetoelectric properties of graphene-ferroelectric nanostructures. The goal is to establish the influence of dimensional effects on the electrophysical, polar, magnetic and magnetoelectric properties of graphene-ferroelectric nanostructures (GFENS) for the creation of the latest non-volatile memory devices and ultra-sensitive sensors. The goal of the 3nd stage is the analysis of the influence of size effects of the electrophysical and magnetoelectric characteristics of graphene-ferroelectric nanostructures and complexes containing ferroelectrics-multiferroics, graphene and/or graphene-like low-dimensional (2D) semiconductors. Main results. We have studied the polar, spectroscopic, electrophysical and magnetoelectric properties of graphene-ferroelectric nanostructures and complexes containing nanoparticles of silicon-compatible ferroelectric-antiferroelectric HfxZr1-xO2-y, graphene, nanoparticles and nanoflakes of graphene-like 2D semiconductor MoS2, thin films and nanoparticles of ferroelectric-multiferroic Bi1-xSmxFeO3. The influence of size effects on the polar, electrophysical and magnetoelectric properties of these graphene-ferroelectric nanostructures and complexes is analyzed. A detailed comparison of theoretical results with experimental data was carried out, as a result of which the most promising of the studied graphene-ferroelectric nanostructures and complexes were proposed as basic elements of the advanced non-volatile memory devices and ultra-sensitive sensors. Product Description popup.authors Bodnaruk Andrii V. Leonenko Yevhen V. Morozovska Hanna M. Pylypchuk Oleksandr S. Ralliev Maksym V. Starynets Serhii M. Tkachenko Vitalii S. Olena M. Fesenko Yaremkevych Andrii D. popup.nrat_date 2024-07-15 Close